zxmn6a08e6 document number ds33376 rev . 8 - 2 1 of 8 www.diodes.com march 2015 ? diodes incorporated advance information zxmn6a08e6 60v n - channel enhancement mode mosfet product summary v (br)dss r ds( on ) i d t a = + 25 c 6 0v 80 m ? @ v gs =10v 3.5 a 150 m ? @ v gs = 4.5 v 2.5 a description this mosfet is designed to minimize the on - state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? dc - dc converters ? power m anagement f unctions ? disconnect s witches ? motor c ontrol features and benefits ? low o n - r esistance ? fast s witching s peed ? low g ate d rive ? low t hreshold ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? case: so t26 ? case material: molded plastic ; ul flammability classification rating 94v - 0 ? moisture sens itivity: level 1 per j - std - 020 ? terminals: finish - matte tin a nnealed over copper l ead frame ; solderable per mil - std - 202, method 208 ? weight: 0. 018 grams (a pproximate) ordering information (note 4 ) part number compliance case packaging zxmn6a08e6ta standard sot 26 3 ,000 / tape & reel zxmn6a08e6t c standard sot 26 10 ,000 / tape & reel notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http : //www.diodes.com/products/packages.html . marking information date code key year 201 5 201 6 201 7 201 8 201 9 20 20 20 21 20 22 code c d e f g h i j month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d equivalent circuit pin out - top view top view sot2 6 6 a 8 y m 6 a 8 = product type marking code ym = date code marking y or y? = year (ex: c = 20 15 ) m or m = month (ex: 9 = september) sot2 6 d s g e3
zxmn6a08e6 document number ds33376 rev . 8 - 2 2 of 8 www.diodes.com march 2015 ? diodes incorporated advance information zxmn6a08e6 maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit drain - source v oltage v dss 60 v gate - source v oltage v gs ? gs = 10v (note 6 ) i d 3.5 a t a = + 70c (note 6 ) 2.8 (note 5 ) 2.8 pulsed drain c urrent v gs = 10v (note 7 ) i dm 16 a continuous source c urrent (body d iode) (note 6 ) i s 2.6 a pulsed source c urrent (body d iode) (note 7 ) i sm 16 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value unit power d issipation linear d erating f actor (note 5 ) p d 1.1 8.8 w mw / c (note 6 ) 1.7 13.6 thermal resistance, junction to ambient (note 5 ) r ja 113 c/w (note 6 ) 73 operating and s torage t emperature r ange t j , t stg - 55 to + 150 c notes: 5 . for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still air condi tions; the device is measured when operating in a steady - state condition. 6 . same as note 5 , except the device is measured at t ? 10 sec. 7 . same as note 5 , except the device is pulsed with d = 0.02 and pulse width 300 s. the pulse current is limited by the maximum junction temperature.
zxmn6a08e6 document number ds33376 rev . 8 - 2 3 of 8 www.diodes.com march 2015 ? diodes incorporated advance information zxmn6a08e6 thermal characteristics 100m 1 10 10m 100m 1 10 25mm x 25mm 1oz fr4 single pulse t amb =25c r ds(on) limited 100s 1ms 10ms 100ms 1s dc safe operating area i d drain current (a) v ds drain-source voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 20 40 60 80 100 120 t amb =25c transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 single pulse t amb =25c pulse power dissipation pulse width (s) maximum power (w)
zxmn6a08e6 document number ds33376 rev . 8 - 2 4 of 8 www.diodes.com march 2015 ? diodes incorporated advance information zxmn6a08e6 electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics drain - source breakdown voltage bv dss 60 ? ? d = 250 a , v gs = 0v zero gate voltage drain current i dss ? ? ds = 60v, v gs = 0v gate - source leakage i gss ? ? ? gs = ? ds = 0v on characteristics gate threshold voltage v gs(th) 1.0 ? ? d = 250 a , v ds = v gs static drain - source on - resistance (note 8 ) r ds(on) ? ? gs = 10v, i d = 4.8a 0.100 0.150 v gs = 4.5v, i d = 4.2a forward transconductance (notes 8 & 9 ) g fs ? ? ds = 15v, i d = 4.8a diode forward voltage (note 8 ) v sd ? s = 4a, v gs = 0v, t j = + 25c reverse r ecovery t ime (note 9 ) t rr ? ? ? f = 1.4a, di/dt = 100a/ s , t j = + 25c reverse r ecovery c harge (note 9 ) q rr ? ? dynamic characteristics (note 9 ) input capacitance c iss ? ? ds = 40v, v gs = 0v f = 1mhz output capacitance c oss ? ? rss ? ? g ? ? ? ? gs = 4.5v v ds = 30v i d = 1.4a total gate charge (note 10 ) q g ? ? gs = 10v gate - source charge (note 10 ) q gs ? ? gd ? ? d(on) ? ? dd = 30v, v gs = 10v i d = 1.5a, r g ? ? r ? ? d(off) ? ? f ? ? notes: 8 . measured under pulsed conditions. pulse width ? 300 s; duty cycle ? 2% . 9 . for design aid only, not subject to production testing. 10 . switching characteristics are independent of operating junction temperatures.
zxmn6a08e6 document number ds33376 rev . 8 - 2 5 of 8 www.diodes.com march 2015 ? diodes incorporated advance information zxmn6a08e6 typical characteristics 0.1 1 10 0.1 1 10 0.1 1 10 0.01 0.1 1 10 2 3 4 5 0.01 0.1 1 10 -50 0 50 100 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 10v 4v 4.5v 3.5v 5v output characteristics t = 25c 3v v gs i d drain current (a) v ds drain-source voltage (v) 10v 5v 2v 2.5v 4v 3v output characteristics t = 150c v gs 3.5v i d drain current (a) v ds drain-source voltage (v) typical transfer characteristics v ds = 10v t = 25c t = 150c i d drain current (a) v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = 10v i d = 4.8a v gs(th) v gs = v ds i d = 250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 7v 3v 10v 4.5v 5v 4v on-resistance v drain current t = 25c 3.5v v gs r ds(on) drain-source on-resistance ??? i d drain current (a) v gs = 0v t = 150c t = 25c source-drain diode forward voltage v sd source-drain voltage (v) i sd reverse drain current (a)
zxmn6a08e6 document number ds33376 rev . 8 - 2 6 of 8 www.diodes.com march 2015 ? diodes incorporated advance information zxmn6a08e6 typical characteristics (cont.) test circuits 1 10 0 200 400 600 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) v ds - drain - source voltage (v) 0 1 2 3 4 5 6 0 2 4 6 8 10 v ds = 15v i d = 1.4a gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) v gs gate-source voltage (v)
zxmn6a08e6 document number ds33376 rev . 8 - 2 7 of 8 www.diodes.com march 2015 ? diodes incorporated advance information zxmn6a08e6 package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. sot26 dim min max typ a1 0 .013 0. 10 0.0 5 a 2 1.00 1.30 1.10 a3 0.70 0.80 0.75 b 0. 35 0. 50 0. 38 c 0.10 0.20 0.15 d 2.90 3.10 3.00 e - - 0.95 e1 - - 1.90 e 2.70 3.00 2.80 e 1 1.50 1.70 1.60 l 0. 35 0. 55 0. 40 a - - 8 a1 - - 7 all dimensions in mm dimensions value (in mm) c 2.40 c 1 0.95 g 1.60 x 0.55 y 0.80 y1 3.20 a1 d e e1 e b a2 a1 seating plane l c a e1 a3 c1 y1 g x y c
zxmn6a08e6 document number ds33376 rev . 8 - 2 8 of 8 www.diodes.com march 2015 ? diodes incorporated advance information zxmn6a08e6 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of t his document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application , customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or fore ign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems witho ut the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices o r systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expe cted to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its sa fety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diod es incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2015 , diodes incorporated www.diodes.com
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